Flexoelectronic doping of the degenerate silicon and the correlated electron behavior

In metal/degenerately doped silicon bilayer structure, the interfacial flexoelectric effect due to strain gradient leads charge carrier transfer from metal layer layer. This excess concentration is called flexoelectronic doping or transfer, which gives rise an electronically polarized (order of magnitude larger than ferroelectric materials) transport measurements, in found increase by two orders doping, changes Fermi level and Hall response. The accumulation modifies electron-electron electron phonon coupling, Mott metal-insulator transition magnetism phonons, respectively. coexistence polarization a new class materials electronic multiferroics. By controlling material behavior can potentially be engineered for quantum, spintronics electronics applications semiconductor materials.